Thursday, August 29, 2019

Engineering Essay Example | Topics and Well Written Essays - 1500 words - 3

Engineering - Essay Example MD simulations are performed to provide a comparison base for the results of the experiment in order to identify with the fundamental mechanism. The result of this shows to have defect formation depending on nuclear collisions up to attainment of threshold of ~ 2.2 keV/nm by Se over which the electronic energy loss becomes significance. The results from the experiment are given in terms of tables and figures. Figure 1 exhibited a distinctive Raman spectrum evolution of ID/IG in SiO2-supported graphene, in which 1 Mev C ions were applied. Table 1 constitutes a list of experimental results of estimated fault yields. There is calculation involving application of SRIM, the electronic stopping power, Se and the nuclear stopping power Sn of occurrence ion in SiO2 and graphene. Figure 2 involves a plotting graph on fault yields in graphene against irradiated ion in graphene nuclear stopping power. The conclusion shows threshold to be set by SiO2 substrate and also the defects of small size are formed in the graphene that is supported (Wang et al. 2015). Yeom, D. Y., Jeon, W., Tu, N. D. K., Yeo, S. Y., Lee, S. S., Sung, B. J., ... & Kim, H. (2015). High- concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties. Scientific reports, 5. The article is all about the study which involves demonstration of B-doped graphene nanoplatelets which can be developed by simple thermal annealing of GO nanoplatelets in boron oxide combination. This article begins by an abstract, which introduces us to graphene and its properties that enhance the carrying out of the experiment. Boron-doped graphene is introduced to be having electrical properties that are easily influenced by oxygen and water impurities. The next part is the introduction which discusses all that is in the body of the article. Various temperatures are then provided for thermal annealing of Boron oxide or GO mixture

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